- ESCONDIDO, CALIFORNIA
At American CRS Equipment, we specialize in providing high-quality, reliable, and precision-engineered power supply solutions tailored for the semiconductor industry. With a commitment to innovation and performance, our products support the most demanding applications in wafer fabrication, testing, and processing.
Our team is dedicated to delivering state-of-the-art technologies that ensure optimal performance, efficiency, and reliability for critical manufacturing processes. From advanced RF power systems to stable DC power supplies, we offer a comprehensive range of solutions to meet your needs.
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1 760-489-0669
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The di-electrically enclosed electrode design eliminates the need for thieving rings, containing electric fringe fields for enhanced precision.
Output Current-Standard models from 2A to 1 0OOA. Voltage - Standard models from 4V to 1 0V. Other models available upon request. Input-Various Input voltage options are available in the range of 100VAC- 480VAC. S0/60Hz, single or 3-phase, depending on output power rating. Regulation Constant Voltage Mode - An output current load change of 100% will cause a voltage variation of less than 0.1 %. Constant Current Mode - An output voltage load change of 100% will cause an output current change variation of less than 0.1 %. line Effects - Variations in the regulated output will not exceed 0.1 % of the output for low line to high line AC input changes. Ripple-Typically S l00mV (1% - 2%) maximum with a resistive load and the power line within the specified range. Maximum ripple typically occurs at 100% of rated power. Stability- Maximum deviation in either voltage or current for an eight (8) hour period is 0.05% under conditions of constant line, load and temperature. Temperature Coefficient- The output current temperature coefficient is 0.03%/ °C of the rated output current.
The tool requires only 500 mL of plating solution to process a 100mm wafer, making it highly efficient for laboratory-scale plating.
The system supports a wide range of materials, including Cu, Ni, Au, Pt, Pd, In, Sn, Ag, Co, Rh, magnetic alloys (Ni, Fe, Co), solder alloys (PbSn, AuSn, SnAg), and lead-free solder alloys.
Intra-wafer uniformity is achieved through features like sealed contacts to prevent material build-up, multi-directional mechanical agitation for reliable mass transport, and the single-shot chemistry platform, which ensures each wafer is processed with identical, re-qualified chemistry.
The tool demonstrates 5% thickness variation for 20 µm gold bumps on 125mm wafers and 6% variation for 3 µm copper on 200mm wafers.
Process drift is minimized through features like sealed contacts to maintain consistent surface area, nozzle-free agitation to prevent clogging and wear, and a di-electrically enclosed electrode design to eliminate thieving ring build-up and contain electric fringe fields.
